搜論文知識網(wǎng)為客戶提供省級以上期刊發(fā)表的相關(guān)信息以及相關(guān)渠道的中介服務(wù)。本站并非《半導(dǎo)體學(xué)報》雜志的官方網(wǎng)站，與《半導(dǎo)體學(xué)報》等同類優(yōu)秀期刊雜志保持密切的合作關(guān)系，負責(zé)合作期刊的推薦、征稿、信息整理收錄等工作。網(wǎng)站本著用心為客戶服務(wù)的原則，根據(jù)客戶的不同需要及稿件特點，可以在數(shù)千家期刊中，推薦最適合您的論文發(fā)表的正規(guī)期刊，幫助客戶節(jié)約時間和成本，提高論文發(fā)表的成功率。

　　期刊簡介：《半導(dǎo)體學(xué)報》是中國電子學(xué)會和中國科學(xué)院半導(dǎo)體研究所主辦的學(xué)術(shù)刊物。它報道半導(dǎo)體物理學(xué)、半導(dǎo)體科學(xué)技術(shù)和相關(guān)科學(xué)技術(shù)領(lǐng)域內(nèi)最新的科研成果和技術(shù)進展，內(nèi)容包括半導(dǎo)體超晶格和微結(jié)構(gòu)物理，半導(dǎo)體材料物理，包括量子點和量子線等材料在內(nèi)的新型半導(dǎo)體材料的生長及性質(zhì)測試，半導(dǎo)體器件物理，新型半導(dǎo)體器件，集成電路的CAD設(shè)計和研制，新工藝，半導(dǎo)體光電子器件和光電集成，與半導(dǎo)體器件相關(guān)的薄膜生長工藝，性質(zhì)和應(yīng)用等等。本刊與物理類期刊和電子類期刊不同，是以半導(dǎo)體和相關(guān)材料為中心的，從物理，材料，器件到應(yīng)用的，從研究到技術(shù)開發(fā)的，跨越物理和信息兩個學(xué)科的綜合性學(xué)術(shù)刊物。《半導(dǎo)體學(xué)報》發(fā)表中、英文稿件。《半導(dǎo)體學(xué)報》被世界四大檢索系統(tǒng)（美國工程索引(EI)，化學(xué)文摘(CA)，英國科學(xué)文摘(SA)，俄羅斯文摘雜志(РЖ)）收錄。
《半導(dǎo)體學(xué)報》1980年創(chuàng)刊。現(xiàn)為月刊，每期190頁左右，國內(nèi)外公開發(fā)行。每期均有英文目次，每篇中文論文均有英文摘要�！栋雽�(dǎo)體學(xué)報》主編為王守武院士。主要讀者對象是從事半導(dǎo)體科學(xué)研究、技術(shù)開發(fā)、生產(chǎn)及相關(guān)學(xué)科的科技人員、管理人員和大專院校的師生。

　　期刊欄目：研究快報、研究論文、研究簡報、技術(shù)進展等。

　　期刊收錄：

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90年獲中科院優(yōu)秀期刊二等獎
92年獲國家科委、中共中央宣傳部和國家新聞出版署全國優(yōu)秀期刊評比三等獎
97年國家科委、中共中央中宣傳部和國家新出版署三等獎
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　　半導(dǎo)體學(xué)報最新期刊目錄

A cryogenic 3.3-V supply, 1.6% 3σ-accuracy all-CMOS voltage reference with 58-dB PSR@10 kHz in 0.18-μm CMOS

摘要：This brief presents a cryogenic voltage reference circuit designed to operate effectively across a wide temperature range from 30 to 300 K. A key feature of the proposed design is utilizing a current ...

Effect of grain size on the resistivity of polycrystalline 3C-SiC

摘要：Silicon carbide offers distinct advantages in the field of power electronic devices. However, manufacturing processes remain a significant barrier to its widespread adoption. Polycrystalline SiC is le...

Investigating the doping performance of an ionic dopant for organic semiconductors and thermoelectric applications

摘要：Doping plays a pivotal role in enhancing the performance of organic semiconductors（OSCs） for advanced optoelectronic and thermoelectric applications. In this study, we systematically investigated the ...

A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform

摘要：<正>With the rapid development of information technology,the demand for high-performance and low-power microprocessors continues to grow. Traditional silicon-based semiconductor technologies have...

Topological materials-based photodetectors from the infrared to terahertz range

摘要：Infrared and terahertz waves constitute pivotal bands within the electromagnetic spectrum, distinguished by their robust penetration capabilities and non-ionizing nature. These wavebands offer the pot...

A 0.1-5.1 GHz high-gain LNA with inductorless composite resistor-capacitor feedback structure based on a 0.25 μm SiGe BiCMOS process

摘要：In this paper, a high-gain inductorless LNA（low-noise amplifier） compatible with multiple communication protocols from 0.1 to 5.1 GHz is proposed. A composite resistor-capacitor feedback structure is ...

Downscaling challenges in IGZO transistors: A study on threshold voltage roll-up and roll-off effects

摘要：Besides the common short-channel effect（SCE） of threshold voltage(V_th) roll-off during the channel length（L） downscaling of In GaZnO（IGZO） thin-film transistors（TFTs）, an opposite V_th<...

A semiconductor radiation dosimeter fabricated in 8-inch process

摘要：The radiation-sensitive field effect transistors(RADFET) radiation dosimeter is a type of radiation detector based on the total dose effects of the p-channel metal-oxide-semiconductor(PMOS) transistor...

4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

摘要：A 4H-SiC superjunction（SJ） MOSFET（SJMOS） with integrated high-K gate dielectric and split gate（HKSG-SJMOS） is proposed in this paper. The key features of HKSG-SJMOS involve the utilization of high-K（H...

Band alignment of SnO/β-Ga₂O₃ heterojunction and its electrical properties for power device application

摘要：In this study, we present the fabrication of vertical SnO/β-Ga₂O₃ heterojunction diode（HJD） via radio frequency（RF）reactive magnetron sputtering. The valence and conduction band ...

Multi-chip multi-phase DC-DC converters for AI power: a ring,a chain,or a net,independent or master-slave?

摘要：<正>Motivation. As artificial intelligence（AI） workloads escalate exponentially, ultra-thin, high-efficiency voltage regulator modules（VRMs） with exceptional power density become essential for ba...

Trends and emerging techniques in isolated power converters

摘要：<正>Isolated power converters have emerged as an active research topic in power integrated circuit(IC) design. Reflecting this growing interest, ISSCC 2025 has featured a dedicated session on "Is...

Broadband photoluminescence and nonlinear chiroptical properties in chiral 2D halide perovskites

摘要：Two-dimensional（2D） chiral halide perovskites（CHPs） have attracted broad interest due to their distinct spin-dependent properties and promising applications in chiroptics and spintronics. Here, we rep...

Growth and optical properties of large-sized Co²⁺:ZnGa₂O₄ single crystal

摘要：The transition of cobalt ions located at tetrahedral sites will produce strong absorption in the visible and nearinfrared regions, and is expected to work in a passively Q-switched solid-state laser a...

Green perovskite CsPbBr₃ light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications

摘要：The emergence of cesium lead halide perovskite materials stable at air opened new prospects for the optoelectronic industry. In this work we present an approach to fabricating a flexible green perovsk...

Progress and trends of low-jitter fractional-N PLL

摘要：<正>Fractional-N phase-locked loops （PLLs） are widely deployed in high-speed communication systems to generate local oscillator （LO） or clock signals with precise frequency. To support sophistica...

High-precision ADC design techniques in ISSCC 2025

摘要：<正>High-precision analog-to-digital converters(ADCs) serve as fundamental components in modern electronic systems,bridging physical analog world and digital intelligence. They find ubiquitous ap...

Review on three-dimensional graphene: synthesis and joint photoelectric regulation in photodetectors

摘要：Graphene has garnered significant attention in photodetection due to its exceptional optical, electrical, mechanical,and thermal properties. However, the practical application of two-dimensional(2D) g...

Reconfigurable devices based on two-dimensional materials for logic and analog applications

摘要：In recent years, as the dimensions of the conventional semiconductor technology is approaching the physical limits,while the multifunction circuits are restricted by the relatively fixed characteristi...

A simple and effective carrier lifetime characterization for semiconductor thin films

摘要：Minority carrier lifetimes τ are a fundamental parameter in semiconductor devices, representing the average time it takes for excess minority carriers to recombine. This characteristic is crucial for ...

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